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Validation of Metal Oxide Semiconductor Field Effect Transistor Technology for Organ Dose Assessment During CT: Comparison with Thermoluminescent Dosimetry

Terry T. Yoshizumi1,2, Philip C. Goodman1, Donald P. Frush1, Giao Nguyen2, Greta Toncheva2, Maksudur Sarder3 and Lottie Barnes2

1 Department of Radiology, Duke University Medical Center, Box 3155, Durham, NC 27710.
2 Division of Radiation Safety, Duke University Medical Center, Durham, NC.
3 Radiation Safety Office, University of Arkansas, Fayetteville, AR.


Figure 1
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  		Fig. 1 —Photograph shows phantom (adult female phantom model 702-D, CIRS).

 

Figure 2
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  		Fig. 2 —Photograph shows placement of metal oxide semiconductor field effect transistor detector in organ location.

 

Figure 3
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  		Fig. 3 —Graph shows percentage uncertainties as function of metal oxide semiconductor field effect transistor (MOSFET) dose. Lower limit of detection is {approx} 140 mrad (1.4 mGy) at 25% at 1 SD. One-phase exponential fit: y(%SD) = 98.78 x exp[-0. 01472 x x(mrad) + 11.08.

 

Figure 4
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  		Fig. 4 —Graph shows absorbed doses for thermoluminescent dosimetry (white) versus metal oxide semiconductor field effect transistor (MOSFET) (gray) measurement. BM = bone marrow.

 

Figure 5
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  		Fig. 5 —Graph shows Bland-Altman plot for difference between measurements versus averaged measurements. Dotted line shows bias (y = 0.042).

 

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